| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| SCS108AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| SCS215AE |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
